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Key Features
| ● 0.4dB noise figure at 900MHz |
| ● 35dBm Output IP3 at 900MHz |
| ● Optimum use from 0.4GHz up to 1.5GHz |
| ● Small package size: 2.0 x 2.0 x 0.75mm3 |
| ● Single 5V Supply |
| ● ESD 250V HBM |
| ● MSL: Level 1 |
| ● Share the same package and pin configuration with AL34 use from 1.5GHz to 2.4GHz |
AL33 GaAs MMIC Low Noise Amplifier
Sanland’s AL33 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA has low noise and high linearity achieved through the use of 0.5um GaAs Enhancement-mode pHEMT process. It is housed in a miniature 2.0 x 2.0 x 0.75mm3 8-pin Quad-Flat-Non-Lead (QFN) package. It is designed for optimum use from 400MHz up to 1.5GHz. The compact footprint and low profile coupled with low noise, high gain and high linearity make the AL33 an ideal choice as a low noise amplifier for cellular infrastructure for GSM and CDMA.
| Type | Downstream |
| Frequency Min(GHz) | 0.4 |
| Frequency Max(GHz) | 1.5 |
| Gain(dB) | 19.4 |
| Input Return Loss(dB) | -16 |
| Output Return Loss(dB) | -12 |
| NF(dB) | 0.4 |
| Voltage(V) | 5 |
| Current(mA) | 135 |
| Package Type | QFN |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes or No |
Major Applications
Electrical Characteristics for Application
| Parameter | Specification | Units | Notes | ||
| Min | Typ. | Max | |||
| Freq | 0.4 | 1.5 | GHz | ||
| Gain | 17.5 | 20.3 | 21 | 800MHz | |
| 19.7 | 850MHz | ||||
| 19.4 | 900MHz | ||||
| P-1dB | 20 | 22.1 | 800MHz | ||
| 20 | 22.1 | 850MHz | |||
| 20 | 22.2 | 900MHz | |||
| OIP3 | 33 | 34.5 | 800MHz | ||
| 33 | 34.8 | 850MHz | |||
| 33 | 35 | 900MHz | |||
| Input return loss | -15 | -10 | 800MHz | ||
| -15 | -10 | 850MHz | |||
| -16 | -10 | 900MHz | |||
| Output return loss | -12 | -10 | 800MHz | ||
| -12 | -10 | 850MHz | |||
| -12 | -10 | 900MHz | |||
| NF | 0.4 | 0.55 | 800MHz | ||
| 0.4 | 0.55 | 850MHz | |||
| 0.4 | 0.55 | 900MHz | |||
| Reverse Isolation | -28 | 800MHz | |||
| -27 | 850MHz | ||||
| -27 | 900MHz | ||||
| Vs | 5 | 5.5 | V | ||
| IC | 40 | 55 | 80 | mA | |
| Test Conditions：VDD=5V, IDD=55mA Typ. OIP3 Tone Spacing=1MHz, Pout per ton=+5 dBm TL=25℃, ZS=ZL=50 Ohms | |||||
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