Key Features
● Medium Power: 27dBm P1dB at 2.7GHz |
● Excellent Linearity: 45 dBm OIP3 at 2.7GHz |
● High Gain: 14 dB at 2.7GHz |
● High Efficiency: 5V/125mA |
● On-chip Active Bias Control |
● Lead-free/Green/RoHS Compliant SOT89 Package |
● ESD 1000V HBM |
AG55 HBT MMICs Cascadable Gain Block
Sanland’ AG55 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400- 4000 MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi- carrier as well as digital applications.
Type | Downstream |
Frequency Min(GHz) | 0.4 |
Frequency Max(GHz) | 4.0 |
Gain(dB) | 12.0 |
Input return loss(dB) | -18 |
Output return loss(dB) | -10 |
NF(dB) | 6.5 |
Voltage(V) | 5 |
Current(mA) | 250 |
Package Type | SOT-89 |
RoHS | Yes |
Lead Free | Yes |
Halogen Free | Yes or No |
Major Applications
Electrical Characteristics for Application
Parameter | Specification | Units | Notes | ||
Min | Typ. | Max | |||
Freq | 0.4 | 4.0 | GHz | ||
Gain | 19 | 21 | 23 | dB | 850MHz |
14 | 15.5 | dB | 1960MHz | ||
13 | 14 | dB | 2700MHz | ||
12 | dB | 3500MHz | |||
P-1dB | 26 | 24.5 | dBm | 850MHz | |
28 | dBm | 1960MHz | |||
27 | dBm | 2700MHz | |||
25.5 | dBm | 3500MHz | |||
OIP3 | 40 | 44 | dBm | 850MHz | |
40 | 44 | dBm | 1960MHz | ||
45 | dBm | 2700MHz | |||
43 | dBm | 3500MHz | |||
Input return loss | -10 | -15 | dB | 850MHz | |
-17 | dB | 1960MHz | |||
-13 | dB | 2700MHz | |||
-18 | dB | 3500MHz | |||
Output return loss | -10 | dB | |||
Reverse Isolation | -25 | dB | |||
NF | 5.0 | 6.5 | dB | ||
Vs | 5.0 | 5.5 | V | ||
IC | 115 | 126 | 140 | mA | |
Test Conditions:Vs=5V ID=126mA Typ. OIP3 Tone Spacing=1MHz, Pout per ton=+5 dBm TL=25℃ ZS=ZL=50 Ohms |